How does ethane wet different substrates?
DOI:
https://doi.org/10.5488/CMP.28.13603Keywords:
surface phase transitions, computer simulations, adsorptionAbstract
Computer simulations are employed to investigate the adsorption mechanisms of ethane on both homogeneous and inhomogeneous substrates. For homogeneous surfaces, the full range of surface phase transitions—from incomplete to complete wetting — can be accessed by tuning the strength of the surface potential. The resulting layering transition temperatures show excellent agreement with experimental measurements of ethane on graphite. By contrast, although all inhomogeneous substrates exhibit a prewetting transition, the adsorption mechanisms are strongly influenced by the stripe width.
References
Arjmandi A., Bi H., Nielsen S. U., Dam-Johansen K., ACS Appl. Mater. Interfaces, 2024, 16, No. 43, 58006–58028.
Ejenstam L., Ovaskainen L., Rodriguez-Meizoso I., Wågberg L., Pan J., Swerin A., Claesson P. M., J. Colloid Interface Sci., 2013, 412, 56–64.
Kalliorinne K., Hindér G., Sandberg J., Holmberg H.-C., Larsson R., Almqvist A., Friction, 2025, 13, No. 9, 9441069.
Bergeron V., Bonn D., Martin J. Y., Vovelle L., Nature, 2000, 405, No. 6788, 772–775.
Bertrand E., Bonn D., Broseta D., Dobbs H., Indekeu J., Meunier J., Ragil K., Shahidzadeh N., J. Pet. Sci. Eng., 2002, 33, No. 1, 217–222.
Bonn D., Eggers J., Indekeu J., Meunier J., Rolley E., Rev. Mod. Phys., 2009, 81, 739–805.
de Gennes P. G., Rev. Mod. Phys., 1985, 57, 827–863.
Young T., Phil. Trans. R. Soc., 1805, 95, 65–87.
Gibbs J. W., Trans. Conn. Acad. Arts Sci., 1874–1878, 3, 108–248, 343–524.
Freundlich H., Z. Phys. Chem., 1907, 57U, No. 1, 385–470.
Langmuir I., J. Am. Chem. Soc., 1918, 40, No. 9, 1361–1403.
Brunauer S., Emmett P. H., Teller E., J. Am. Chem. Soc., 1938, 60, No. 2, 309–319.
Cahn J. W., J. Chem. Phys., 1977, 66, No. 8, 3667–3672.
Ebner C., Saam W. F., Phys. Rev. Lett., 1977, 38, 1486–1489.
Pandit R., Schick M., Wortis M., Phys. Rev. B, 1982, 26, 5112–5140.
Binder K., Landau D. P., Phys. Rev. B, 1988, 37, 1745–1765.
Nham H. S., Hess G. B., Phys. Rev. B, 1988, 38, 5166–5169.
Kruchten F., Knorr K., Volkmann U. G., Taub H., Hansen F. Y., Matthies B., Herwig K. W., Langmuir, 2005, 21, No. 16, 7507–7512.
Kellay H., Bonn D., Meunier J., Phys. Rev. Lett., 1993, 71, 2607–2610.
Taborek P., Rutledge J. E., Phys. Rev. Lett., 1992, 68, 2184–2187.
Ross D., Bonn D., Posazhennikova A. I., Indekeu J. O., Meunier J., Phys. Rev. Lett., 2001, 87, 176103.
Rafaï S., Bonn D., Bertrand E., Meunier J., Weiss V. C., Indekeu J. O., Phys. Rev. Lett., 2004, 92, 245701.
Patrykiejew A., Sokołowski S., Binder K., Surf. Sci. Rep., 2000, 37, No. 6, 207–344.
Patrykiejew A., Sokolowski S., Pizio O., In: Surface and Interface Science: Solid-Gas Interfaces II, Wandelt K. (Ed.), Wiley, 2016, 883–1253.
Dąbrowska K., Pizio O., Sokołowski S., Condens. Matter Phys., 2022, 25, No. 3, 33603.
Bryk P., Korczeniewski E., Szymański G. S., Kowalczyk P., Terpiłowski K., Terzyk A. P., Materials, 2020, 13, No. 7.
Terzyk A. P., Bryk P., Korczeniewski E., Kowalczyk P., Zawadzka A., Płóciennik P., Wiśniewski M., Wesołowski R. P., Langmuir, 2019, 35, No. 2, 420–427.
Karykowski K., Rżysko W., Patrykiejew A., Sokołowski S., Thin Solid Films, 1994, 249, No. 2, 236–240.
Chmiel C., Karykowski K., Patrykiejew A., Rżysko W., Sokołowski S., Mol. Phys., 1994, 81, No. 3, 691–703.
Chmiel G., Patrykiejew A., Rżysko W., Sokołowski S., Mol. Phys., 1994, 83, No. 1, 19–29.
Martin M. G., Siepmann J. I., J. Phys. Chem. B, 1998, 102, No. 14, 2569–2577.
Yan Q., de Pablo J. J., J. Chem. Phys., 1999, 111, No. 21, 9509–9516.
Ferrenberg A. M., Swendsen R. H., Phys. Rev. Lett., 1988, 61, 2635–2638.
Binder K., Phys. Rev. Lett., 1981, 47, 693–696.
Rżysko W., Trokhymchuk A., J. Chem. Phys., 2012, 137, No. 22, 224505.
Benet J., Palanco J. G., Sanz E., MacDowell L. G., J. Phys. Chem. C, 2014, 118, No. 38, 22079–22089.
MacDowell L. G., Llombart P., Benet J., Palanco J. G., Guerrero-Martinez A., ACS Omega, 2018, 3, No. 1, 112–123.
Friend D. G., Ingham H., Fly J. F., J. Phys. Chem. Ref. Data, 1991, 20, No. 2, 275–347.
Ramesh S., Zhang Q., Torzo G., Maynard J. D., Phys. Rev. Lett., 1984, 52, 2375–2378.
Downloads
Published
Issue
Section
Categories
License
Copyright (c) 2026 Ł. Baran, D. Tarasewicz, W. Rżysko

This work is licensed under a Creative Commons Attribution 4.0 International License.







